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vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 1 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power phase control thyristors (power modules), 50 a, 70 a, 90 a features ? electrically isolated base plate ? types up to 1200 v rrm ? 3500 v rms isolating voltage ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul e78996 approved ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description these series of t-modules are intended for general purpose applications such as battery chargers, welders and plating equipment, regulated power su pplies and temperature and speed control circuits. the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. electrical specifications product summary package d-55 diode variation single scr i t(av) 50 a, 70 a, 90 a v drm /v rrm 100 v, 1200 v v tm 1.55 v i gt 120 ma t j -40 c to +125 c type modules - thyr istor, standard d-55 major ratings and characteristics symbol characteristics t50ria t70ria t90ria units i t(av) 70 c 50 70 90 a i t(rms) 80 110 141 a i tsm 50 hz 1310 1660 1780 a 60 hz 1370 1740 1870 i 2 t 50 hz 8550 13 860 15 900 a 2 s 60 hz 7800 12 650 14 500 i 2 ? t 85 500 138 500 159 100 a 2 ? s v rrm range 100 to 1200 100 to 1200 100 to 1200 v t j -40 to +125 c voltage ratings type ? number voltage code v rrm /v drm , maximum repetitive peak reverse and peak off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = 25 c a VS-T50RIA ? vs-t70ria ? vs-t90ria 10 100 150 100 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 2 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) available with dv/dt = 1000 v/s, to co mplete code add s90 i.e. t90ria80s90 on-state conduction parameter symbol test conditions t50ria t70ria t90ria units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 50 70 90 a 70 70 70 c maximum rms on-state current i t(rms) 80 110 141 a maximum peak, one-cycle on-state, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sine half wave, ? initial ? t j = t j maximum 1310 1660 1780 a t = 8.3 ms 1370 1740 1870 t = 10 ms 100 % v rrm ? reapplied 1100 1400 1500 t = 8.3 ms 1150 1460 1570 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 8550 13 860 15 900 a 2 s t = 8.3 ms 7800 12 650 14 500 t = 10 ms 100 % v rrm ? reapplied 6050 9800 11 250 t = 8.3 ms 5520 8950 10 270 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 a 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 0.97 0.77 0.78 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j maximum 1.13 0.88 0.88 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 4.1 3.6 2.9 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j maximum 3.3 3.2 2.6 maximum on-state voltage drop v tm i tm = ? x i t(av) , t j = 25 c, t p = 400 s square ? average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.60 1.55 1.55 v maximum forward voltage drop v fm i tm = ? x i t(av) , t j = 25 c, t p = 400 s square ? average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.60 1.55 1.55 v maximum holding current i h anode supply = 6 v, initial i t = 30 a, t j = 25 c 200 200 200 ma maximum latching current i l anode supply = 6 v, resistive load = 10 ?? gate pulse: 10 v, 100 s, t j = 25 c 400 400 400 switching parameter symbol test conditions values units typical turn-on time t gd t j = 25 c, v d = 50 % v drm , i tm = 50 a ? i g = 500 ma, t r ? 0.5, t p ? 6 s 0.9 s typical reverse recovery time t rr t j = 125 c, i tm = 50 a, t p = 300 s, di/dt = 10 a/s 3 typical turn-off time t q t j = t j maximum, i tm = 50 a, t p = 300 s, di/dt = 15 a/s, ? v r = 100 v, linear to 80 % v drm 110 blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum 15 ma rms isolation voltage v isol 50 hz, circuit to base, al l terminals shorted, t j = 25 c, t = 1 s 3500 v critical rate of rise of ? off-state voltage dv/dt t j = t j maximum, linear to 80 % rated v drm (1) 500 v/s
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 3 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) a mounting compound is recommended and the torque should be rech ecked after a period of 3 hours to allow for the spread of the compound note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions t50ria t70ria t90ria units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 12 12 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz 2.5 3 3 maximum peak gate current i gm t j = t j maximum, t p ? 5 ms 2.5 3 3 a maximum peak negati ve gate voltage -v gt 10 10 10 v maximum required dc gate voltage to trigger v gt t j = -40 c anode supply = 6 v, ? resistive load; ? ra = 1 ? 4.0 4.0 4.0 v t j = 25 c 2.5 2.5 2.5 t j = t j maximum 1.5 1.5 1.5 maximum required dc gate current to trigger i gt t j = -40 c 250 270 270 ma t j = 25 c 100 120 120 t j = t j maximum 506060 maximum gate voltag e that will not trigger v gd t j = t j maximum, rated v drm applied 0.2 0.2 0.2 v maximum gate curren t that will not trigger i gd 5.0 6.0 6.0 ma maximum rate of ri se of turned-on current di/dt v d = 0.67 rated v drm , i tm = 2 x rated di/dt ? i g = 400 ma for t50ria and i g = 500 ma for t70ria/t90ria; t r < 0.5 s, t p ? 6 s ? for repetitive value use 40 % non-repetitive ? per jedec std. rs397, 5.2.2.6 200 200 200 a/s 180 180 180 160 160 160 150 150 150 thermal and mechanical specifications parameter symbol test conditio ns t50ria t70ria t90ria units maximum junction operating ? temperature range t j -40 to +125 c maximum storage ? temperature range t stg -40 to +150 maximum thermal resistance, ? junction to case per junction r thjc dc operation 0.65 0.50 0.38 k/w maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth, flat and greased 0.2 mounting torque, 10 % to heatsink non-lubricated ? threads m3.5 mounting screws (1) 1.3 10 % nm terminals m5 screw terminals 3 10 % approximate weight 54 g case style d-55 (t-module) ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 t50ria 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 k/w t70ria 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24 t90ria 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 4 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 50 60 70 80 90 100 110 120 130 0 102030405060 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle t50ria.. series r (dc) = 0.65 k/w thjc 50 60 70 80 90 100 110 120 130 0 1020304050607080 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period t50ria.. series r (dc) = 0.65 k/w thjc 0 20406080100120 maximum allowable ambient temperature (c) 0 . 3k / w 10 k / w 5 k / w 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w r = 0 . 1k / w - d e l t a r t h s a 0 10 20 30 40 50 60 70 80 01020304050 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) t50ria.. series t = 125c j 020406080100120 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r t h s a 5 k / w 3 k / w 2 k/ w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0 10 20 30 40 50 60 70 80 90 100 110 0 1020304050607080 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) t50ria.. series t = 125c j
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 5 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltag e drop characteristics fig. 8 - gate characteristics 500 600 700 800 900 1000 1100 1200 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) t50ria.. series initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 500 600 700 800 900 1000 1100 1200 1300 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j t50ria.. series 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t50ria.. series t = 125c j 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse (1) pgm = 10w, tp = 5ms (2) pgm = 20w, tp = 2ms (3) pgm = 50w, tp = 1ms (4) pgm = 100w, tp = 500s <=30% rated di/dt : 20v, 65ohms tr=1s, tp>=6s t50ria.. series frequency limited by pg(av) rated di/dt : 20v, 30ohms; tr=0.5s, tp>=6s (3) (4)
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 6 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - current ratings ch aracteristics fig. 10 - current ratings characteristics fig. 11 - on-state powe r loss characteristics fig. 12 - on-state powe r loss characteristics 50 60 70 80 90 100 110 120 130 0 1020304050607080 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle t70ria.. series r (dc) = 0.50 k/w thjc 50 60 70 80 90 100 110 120 130 0 20406080100120 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period t70ria.. series r (dc) = 0.50 k/w thjc 020406080100120 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 7 k / w 0 . 5 k / w 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w 7 k / w 0 10 20 30 40 50 60 70 80 90 100 0 10203040506070 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) t70ria.. series t = 125c j 020406080100120 maximum allowable ambient temperature (c) 5 k / w 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 20 40 60 80 100 120 140 0 20406080100120 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) t70ria.. series t = 125c j
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 7 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - maximum non-repetitive surge current fig. 14 - maximum non-repetitive surge current fig. 15 - on-state voltage drop characteristics fig. 16 - gate characteristics 700 800 900 1000 1100 1200 1300 1400 1500 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) t70ria.. series at any rated load condition and with rated v applied following surge. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j rrm 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j t70ria.. series 1 10 100 1000 00.511.522.533.54 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t70ria.. series t = 125c j 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse t70ria.., t90ria.. series frequency limited by pg(av) tr=1s, tp>=6s rated di/dt : 20v, 20ohms; tr=0.5s, tp>=6s <=30% rated di/dt : 15v, 40ohms (1) pgm = 12w, tp = 5ms (2) pgm = 30w, tp = 2ms (3) pgm = 60w, tp = 1ms (4) pgm = 200w, tp = 300s (3) (4)
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 8 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - current ratings ch aracteristics fig. 18 - current ratings characteristics fig. 19 - on-state powe r loss characteristics fig. 20 - on-state powe r loss characteristics 50 60 70 80 90 100 110 120 130 020406080100 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle t90ria.. series r (dc) = 0.38 k/w thjc 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period t90ria.. series r (dc) = 0.38 k/w thjc 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 7 k / w 1 k / w 1 . 5 k / w 2 k /w 3 k / w 0 20 40 60 80 100 120 140 0 102030405060708090 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) t90ria series t = 125c j 020406080100120 maximum allowable ambient temperature (c) r= 0 . 1 k/ w- del ta r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 7 k / w 1 k / w 1 . 5 k / w 2 k / w 0 20 40 60 80 100 120 140 160 180 0 20406080100120140160 dc 180 120 90 60 30 rms limit conduction period maximu m aver age on-state power loss (w) average on-state current (a) t90ria.. series t = 125c j
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 9 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 21 - maximum non-repetitive surge current fig. 22 - maximum non-repetitive surge current fig. 23 - on-state voltage drop characteristics fig. 24 - thermal impedance z thjc characteristics 700 800 900 1000 1100 1200 1300 1400 1500 1600 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) t90ria.. series at any rated load condition and with rated v applied following surge. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j t90ria.. series 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t90ria.. series t = 125c j 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc transient thermal impedance z (k/w) steady state value r = 0.65 k/w r = 0.50 k/w r = 0.38 k/w (dc operation) thjc thjc thjc t50ria.. series t70ria.. series t90ria.. series
vs-t..ria series www.vishay.com vishay semiconductors revision: 20-dec-16 10 document number: 93756 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration circuit description circuit drawing single scr links to related documents dimensions www.vishay.com/doc?95336 - module type 4 - circuit configuration - voltage code x 10 = v rrm 5 - current rating 3 2 device code 1 3 2 4 5 t vs- 50 ria 120 1 - vishay semiconductors product 2 1 g
outline dimensions www.vishay.com vishay semiconductors revision: 24-apr-17 1 document number: 95336 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d-55 (t-module) thyristor standard dimensions in millimeters (inches) note ?1 = anode ? 2 = cathode 3 0.5 (0.12 0.02) 3.9 0.05 (0.15 0.002) 8 0.3 (0.31 0.01) m5 30 (1.18) 27 0.3 (1.06 0.01) 41 (1.61) max. 26 1 (1.02 0.04) 23.5 0.5 (0.93 0.02) 2 1 11 (0.43) 18 (0.71) g 3 (0.12) 4.75 0.1 (0.19 0.004) 1.3 (0.05) 0.50 0.03 (0.02 0.001) 32 (1.26) max. 15 (0.59)
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